ICORLAB

10/26/2024

is ready for the 2024-2025 academic year.

10/18/2024

Congratulations to University of Illinois Urbana-Champaign Illinois ECE ICORLABers Mr. Zhuoran Han and Mr. Jaekwon Lee for the National Inventors Hall of Fame award.

Thanks to the Advanced Research Projects Agency - Energy (ARPA-E) Program for the opportunity, and Advanced Research Projects Agency - Energy (ARPA-E) and II-VI FOUNDATION for the funding, and our vendor partners Great Lakes Crystal Technologies and DIAMFAB for valuable support.
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A RELIABLE SWITCH FOR A CARBON-NEUTRAL ELECTRIC GRID: Increased energy demand and climate change cause power outages, disrupting daily lives and costing American households $150 billion annually. Photoconductive Semiconductor Switches (PCSS) promise to address complex challenges faced by the aging U.S. power grid and transform it into a more reliable and resilient grid. The diamond-based PCSS technology allows for faster recovery from outages and improves grid stability with rapid switching, high-voltage capabilities and exceptional reliability, while reducing reliance on fossil fuels, enabling wider adoption of renewable sources and advancing toward net-zero emissions.
https://youtu.be/ihZ9oTLlns0?feature=shared

10/05/2024

Congratulations to Zhuoran Han and professor Can Bayram on earning a spot on the TOP DOWNLOADED list for their paper "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" on IEEE EDL.

READ THE PAPER: https://buff.ly/4eS1ciU

09/26/2024

01/24/2024

Diamond-based semiconductors for a faster, more resilient power grid

01/24/2024

Carbon’s crystalline form works well with renewables’ high voltages and currents

01/24/2024

Mind the (green) gap

01/02/2024

FRONT COVER of Applied Physics Letters’ New Year’s issue: Going green with cubic III-nitrides shows promise for filling the green gap in solid-state lighting & enabling integrated photonics.

Cubic III-nitrides achieve 32% of internal quantum efficiency in the green, which is comparable to hexagonal active layers; using only 16 % of indium content, which is much lower than hexagonal ones.

That's one step towards the buildings goal and a giant leap for photonics and electronics.

Thanks to our sponsors. ICORLAB Illinois ECE The Grainger College of Engineering University of Illinois Urbana-Champaign Advanced Research Projects Agency - Energy (ARPA-E) Office of Naval Research

Appl. Phys. Lett. 124, 011101 (2024)
https://doi.org/10.1063/5.0179477
DOI: 10.1063/5.0179477

11/27/2023

Check out a new paper by Zhouran Han and Can Bayram of Illinois PSM | University of Illinois at Urbana Champaign on diamond p-type lateral Schottky barrier diodes with high breakdown voltage (4612 V at 0.01 mA/mm). Learn more and read the journal: bit.ly/3Rdgx4X

11/27/2023

Congratulations to Professor Can Bayram and his Ph.D. candidate, Zhuoran Han for gaining the #1 spot at IEEE for their paper "Diamond P-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V At 0.01 MA/Mm)" in IEEE Electron Device Letters!

PAPER LINK: https://ieeexplore.ieee.org/document/10236581

11/27/2023

Next generation semiconductors: Diamond device shows highest breakdown voltage